PROBLEM TO BE SOLVED: To provide an anodic oxidation assisted shape creation etching method, a polishing method and a high-precision shape creation method, capable of highly efficiently creating a hard-to-process material such as a single crystal SiC into a target shape having a scratch-free and damage-free high-definition surface.;SOLUTION: The shape creation etching method includes: an anodic oxidation process of forming an oxide film on a surface with an object to be processed as an anode under the presence of an electrolyte; and a dissolution process of dissolving and removing the oxide film in contact with a dissolution liquid, and simultaneously proceeds with both the processes using a processing liquid mixing the electrolyte and the dissolution liquid. The polishing method includes: an anodic oxidation process of forming an oxide film on a surface with an object to be processed as an anode under the presence of an electrolyte after rough processing using the shape creation etching method; and a polishing process of selectively polishing and removing the oxide film using a polishing material having Mohs hardness intermediate between the object to be processed and the oxide film, and simultaneously proceeds with both the processes for flattening. Finish polishing is performed using the polishing method.;COPYRIGHT: (C)2015,JPO&INPIT
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