首页> 外国专利> Detection method of the plasmon excitation sensor chip and the plasmon excitation sensor using this, as well as the analyte

Detection method of the plasmon excitation sensor chip and the plasmon excitation sensor using this, as well as the analyte

机译:等离子体激元激发传感器芯片的检测方法,使用该方法的等离子体激元激发传感器以及分析物

摘要

PROBLEM TO BE SOLVED: To provide a plasmon excitation sensor for performing analyte detection with high sensitivity and stability by overcoming such a problem as fluorescent light extinction, the nonspecific adsorption of an analyte or the like in a specimen, and a diffusion noise on a sensor surface due to the nonspecific adsorption or the like.;SOLUTION: Disclosed is a plasmon excitation sensor chip configured such that a metallic film is formed on the surface of a transparent dielectric substrate, and that a transparent dielectric layer is formed on the surface of the metallic thin film, and that its contact angle with water in air on the surface of the transparent dielectric layer is equal to or more than 0° and equal to or less than 50°, and a plasmon excitation sensor using the plasmon excitation sensor chip.;COPYRIGHT: (C)2012,JPO&INPIT
机译:解决的问题:提供一种等离子体激元激发传感器,其通过克服诸如荧光灯熄灭,样品中分析物等的非特异性吸附以及传感器上的扩散噪声之类的问题而以高灵敏度和稳定性进行分析物检测。解决方案:本发明公开了一种等离子体激元激发传感器芯片,其构造为在透明电介质基板的表面上形成金属膜,并在透明电介质基板的表面上形成透明电介质层。金属薄膜,其与透明介电层表面上空气中水的接触角等于或大于0度;等于或小于50°;使用等离激元激发传感器芯片的等离激元激发传感器。;版权所有(C)2012,JPO&INPIT

著录项

  • 公开/公告号JP5516198B2

    专利类型

  • 公开/公告日2014-06-11

    原文格式PDF

  • 申请/专利权人 コニカミノルタ株式会社;

    申请/专利号JP20100172152

  • 发明设计人 二宮 英隆;石田 賢治;

    申请日2010-07-30

  • 分类号G01N21/64;G01N21/78;

  • 国家 JP

  • 入库时间 2022-08-21 16:17:58

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