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SIC COMPACT AND METHOD FOR MANUFACTURING SIC COMPACT
SIC COMPACT AND METHOD FOR MANUFACTURING SIC COMPACT
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机译:SIC紧凑型及制造SIC紧凑型的方法
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摘要
PROBLEM TO BE SOLVED: To provide a CVD-SiC compact which has low light permeability and high electrical resistivity and can be favorably used for an etcher member and so on used in a semiconductor manufacturing process.;SOLUTION: An SiC compact, formed by the CVD method, includes boron atoms by 1-30 mass ppm, and nitrogen atoms by more than 100 mass ppm and equal to or less than 1000 mass ppm. Preferably, electrical resistivity is more than 10 Ω cm and equal to or less than 100000 Ω cm, and light permeability is 0-1% at a wavelength of 950 nm.;COPYRIGHT: (C)2014,JPO&INPIT
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