Method for producing a heterogeneous metal catalyst, and no high-efficiency broadband semiconductor nanowire device

摘要

Candidate in for the whole solar spectrum solar cells and ultra-high-efficiency solid-state physics light source, there is a element based on InGaN nanowires. In addition, these nanowires, and typically requires heterostructure, and quantum dots. All this is a necessary condition for growing way replicable and controllable defects and relatively low structures. In addition, flexibility with device design requires that the nanowires of the substrate is either GaN or InN. In accordance with the present invention, shown without the requiring heterogeneous metal catalyst, method of growing a structure and associated nanowires free relatively defect for the first 3A nitrides, non-catalytic growth technique of the prior art I have overcome the uneven growth. According to another embodiment of the present invention, well inside the internal dot dot nanowire structures and self-assembled dot-dot internal nanowire is illustrated. [Selection Figure] Figure 20