首页> 外文会议>First global congress on nanoengineering for medicine and biology 2010 >METALS, SEMICONDUCTORS, AND ALLOY NANOWIRES ON DNA SCAFFOLDS:SYNTHESIS AND DEVICE APPLICATIONS
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METALS, SEMICONDUCTORS, AND ALLOY NANOWIRES ON DNA SCAFFOLDS:SYNTHESIS AND DEVICE APPLICATIONS

机译:DNA支架上的金属,半导体和合金纳米线:合成和设备应用

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摘要

In this presentation, we will demonstrate fast and electroless UV-photo activation techniques to synthesize electrically conductive metals (Pd), semiconductors (CdS), and alloy (Au-Ag) nanowires of diameter -10-180 nm on DNA. The electrical characterization showed that DNA nanowires are either exhibiting Ohmic or semiconducting behavior having low contact resistance with the electrodes. The nanowires are about 1-10 micrometers long and the length depends on the molecular weight of DNA. Highly selective deposition on DNA is obtained by specific complexation between the metal ions and DNA, followed by the growth of nanoclusters in DNA chain to form the corresponding nanowires. The eventual diameter of the nanowires obtained in our experiments is over 10 nm that is significantly larger than the -1-2 nm diameter of the double helix DNA. The DNA nanowires orchestrated with semiconducting Si nanowires, carbon nanotubes, or co-deposited with metal nanoparticles can potentially lead to avenues for making complex single electron devices and Schottky nanodevices.
机译:在本演示中,我们将演示快速,无电的UV光激活技术,以在DNA上合成直径为-10-180 nm的导电金属(Pd),半导体(CdS)和合金(Au-Ag)纳米线。电学特征表明,DNA纳米线表现出欧姆行为或半导体行为,与电极的接触电阻低。纳米线长约1-10微米,其长度取决于DNA的分子量。通过在金属离子和DNA之间进行特异性络合,然后在DNA链中生长纳米团簇以形成相应的纳米线,可以在DNA上实现高度选择性的沉积。在我们的实验中获得的纳米线的最终直径超过10 nm,该直径明显大于双螺旋DNA的-1-2 nm直径。用半导体Si纳米线,碳纳米管或与金属纳米颗粒共沉积的DNA纳米线可能会导致制造复杂的单电子器件和肖特基纳米器件的途径。

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