Semiconductor structure having a nucleation layer for preventing the surface charge on a III-V material of the Group IV-IV materials or on group IV

摘要

A semiconductor structure having: a column IV material or column IV-IV material; a nucleation layer of AlN layer or a column III nitride having more than 60% aluminum content on a surface of the column IV material or column IV-IV material and a layer of column III-V material over the nucleation layer, where the nucleation layer and the layer of column III-V material over the nucleation layer have different crystallographic structures. In one embodiment, the column III-V nucleation layer is a nitride and the column III-V material of the over the nucleation layer is a non-nitride such as, for example, an arsenide (e.g., GaAs), a phosphide (e.g., InP), or an antimonide (e.g. InSb), or alloys thereof.