Negative differential resistance element of vertical tunneling

摘要

The present disclosure relates to the manufacture of microelectronic devices that negative differential resistance element one is formed inside at least. In one embodiment, the negative differential resistance element is formed using at least a quantum well. Well, embodiments of the negative differential resistance elements of the present description is to achieve a high peak-to-valley current ratio in order to achieve a noise margin and the power dissipation low to achieve a high peak drive current in order to achieve high performance well, can thus be utilized in the logic integrated circuit memory and / or Te. [Selection] Figure Figure 1