Selective deposition of the polymer film on the bare silicon rather than the oxide surface

摘要

Method for selective deposition on a silicon substrate having a region of the oxide and bare silicon regions formed on the silicon substrate . And it is placed on the wafer support within the processing chamber substrate , and introducing into the reactor a carbon-containing gas , and applying to the substrate a bias , the method includes forming a plasma from a carbon -containing gas and includes a be implanted into a region of the oxide on the substrate carbon ions by plasma doping process , and be deposited on the bare silicon regions carbon -containing film .