FORWARD SCATTERING AND BEAM BLUR CORRECTION DEVICE, FORWARD SCATTERING AND BEAM BLUR CORRECTION METHOD AND FORWARD SCATTERING AND BEAM BLUR CORRECTION PROGRAM

摘要

PROBLEM TO BE SOLVED: To reduce the displacement of a resist pattern and a design pattern formed on a resist after lithography, by forward scattering and beam blur of electron beam lithography.;SOLUTION: When forming a periodic pattern on a large area by electron beam lithography, a basic pattern configuring one period is acquired, a drawing position correction value dependent on the back scattering correction coefficients is obtained for each figure configuring the basic pattern, appropriate back scattering correction coefficients are obtained from the drawing area density of a pattern design, and then an optimum drawing position for each figure configuring a pattern design is obtained based on the drawing area position correction amount.;COPYRIGHT: (C)2014,JPO&INPIT