On the mannered null substrate which forms the feature section of high aspect ratio

摘要

PROBLEM TO BE SOLVED: To provide methods for forming anisotropic features for high aspect ratio application in etch process.;SOLUTION: In one embodiment, a method for anisotropic etching a dielectric layer on a substrate includes providing a substrate having a patterned mask layer disposed on a dielectric layer in an etch chamber, supplying a gas mixture including at least a fluorine and carbon containing gas and a silicon fluorine gas into the etch chamber, and etching features in the dielectric layer in the presence of a plasma formed from the gas mixture. The present method advantageously facilitates profile and dimension control of features with high aspect ratios.;COPYRIGHT: (C)2009,JPO&INPIT