The production methodological null first connected territory (18) of micro structure, and its

摘要

The form (12) an insulating substrate provided (18, 20) connecting the first and second regions, a manufacturing method thermoelectric microstructure (10), the second to the connection region from the second connection region of the first forming on the substrate a first set of (14) (with a Seebeck coefficient of the first) semiconductor devices or a conductor extending in parallel in one direction, the second to the connection region from the second connection region of the first forming on the substrate a set of second (with a Seebeck coefficient of the second is electrically isolated from the elements of the first set of) semiconductor devices or a conductor extending parallel to the direction of, and die first substrate in the connection area of ​​the two, to provide electrical connection element (24). The elements of the two sets of single, separated in a predetermined direction by the _{(1, d} 2 _d) the average distance in a predetermined connection region, average size of the electrical connection element in a predetermined direction (P) is a single is greater than the maximum value of the average distance between the elements of the set, the distance in the predetermined direction between the edge of the connection the two elements (E) is smaller than the minimum value of the average distance between the elements of a single set.