Cascode circuit using a depletion mode GaN -based FET

摘要

The circuit, the input drain, includes the source and the gate node. This circuit furthermore includes III being attached nitride depression mode FET which possesses the source, the drain and the gate, the gate of this depression mode FET is connected to the electric potential which maintains depression mode FET in on state. In addition, this circuit furthermore includes the enhancement mode FET which possesses the source, the drain and the gate. The source of depression mode FET is connected in series to the drain of enhancement mode FET. The drain of depression mode FET function does as an input drain node, the source of enhancement mode FET function does as an input source node, and, the gate of enhancement mode FET functioning does as an input gate node. Selective figure Figure 2