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In the program method of the flash memory unit which includes the plural plainness which possess

机译:在具有多个素体的闪存单元的编程方法中,具有

摘要

A flash memory device that includes a voltage generator circuit configured to generate a program voltage, a pass voltage, and a high voltage; a plurality of planes configured to perform a program operation in response to the program, pass, and high voltages and to verify the program operation, respectively; and control logic configured to control the planes in response to verification results from the planes, wherein the control logic controls the planes so as to interrupt the program and pass voltages or the high voltage from being applied to program-passed planes.
机译:一种闪存装置,包括:电压产生器电路,被配置为产生编程电压,通过电压和高电压;以及多个平面,其被配置为响应于编程电压,通过电压和高电压来执行编程操作并分别验证编程操作;控制逻辑被配置为响应于来自平面的验证结果来控制平面,其中,控制逻辑控制平面以中断编程并通过电压或将高电压施加到通过程序的平面。

著录项

  • 公开/公告号JP5393999B2

    专利类型

  • 公开/公告日2014-01-22

    原文格式PDF

  • 申请/专利号JP20080112741

  • 发明设计人 朴 鎮 城;

    申请日2008-04-23

  • 分类号G11C16/02;G11C16/06;G11C16/04;

  • 国家 JP

  • 入库时间 2022-08-21 16:12:40

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