Anti-fuse replacement determination method and anti-fuse replacement determination circuit, a semiconductor memory device

摘要

An antifuse replacement determination circuit of a semiconductor memory device, in which the address of a bad memory cell is stored by destroying the insulation of an antifuse element, includes a charging circuit for charging a node of the antifuse element to have a predetermined voltage, and making the charge at the node self-discharge via the antifuse element after the charging of the node is completed; a comparison and determination circuit for comparing the voltage at the node of the antifuse element with a plurality of reference voltages when a predetermined time has elapsed after the completion of the charging of the node; and a determination part for determining, based on a determination result with respect to the comparison using the plurality of reference voltages in the comparison and determination circuit, whether or not replacement of the bad memory cell has been performed normally by using the antifuse element.