Substrate surface temperature control equipment and manner inside process chamber

摘要

The invention relates to a method of controlling the surface temperature of a substrate (9) resting on a substrate holder (2) borne by a substrate holder support (1) on a dynamic gas cushion (8) formed by a gas stream in a process chamber (12) of a CVD reactor, wherein heat is introduced into the substrate (9) at least partly by thermal conduction via the gas cushion. To reduce lateral deviations of the surface temperature of a substrate from a mean, it is proposed that the gas stream forming the gas cushion (8) be formed by two or more gases (17, 18) having different specific thermal conductivities and the composition be varied as a function of a measured substrate temperature.