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HIGHLY INTEGRATED MILLIMETER-WAVE SOC LAYOUT TECHNIQUES FOR IMPROVED PERFORMANCE AND MODELING ACCURACY
HIGHLY INTEGRATED MILLIMETER-WAVE SOC LAYOUT TECHNIQUES FOR IMPROVED PERFORMANCE AND MODELING ACCURACY
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机译:高度集成的毫米波SOC布局技术,可提高性能和建模精度
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摘要
A capacitor integrated circuit can include a top metal layer, a bottom metal layer, and an intermediate metal layer. The top metal layer can store energy received from a transmission signal in an electric field. The top metal layer can include a first comb structure and a second comb structure, where the first comb structure can be interleaved with the second comb structure. The bottom metal layer can be positioned underneath the top metal layer and can provide a path to ground. The intermediate metal layer can be positioned over the bottom metal layer and underneath at least a portion of the top metal layer. The intermediate metal layer can provide a signal path for a supply voltage.
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