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SELF-ALIGNED BOTTOM PLATE FOR METAL HIGH-K DIELECTRIC METAL INSULATOR METAL (MIM) EMBEDDED DYNAMIC RANDOM ACCESS MEMORY
SELF-ALIGNED BOTTOM PLATE FOR METAL HIGH-K DIELECTRIC METAL INSULATOR METAL (MIM) EMBEDDED DYNAMIC RANDOM ACCESS MEMORY
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机译:用于金属高介电常数金属绝缘体(MIM)嵌入式动态随机存取存储器的自对准底部平板
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摘要
A memory device, and a method of forming a memory device, is provided that includes a capacitor with a lower electrode of a metal semiconductor alloy. In one embodiment, the memory device includes a trench present in a semiconductor substrate including a semiconductor on insulating (SOI) layer on top of a buried dielectric layer, wherein the buried dielectric layer is on top of a base semiconductor layer. A capacitor is present in the trench, wherein the capacitor includes a lower electrode of a metal semiconductor alloy having an upper edge that is self-aligned to the upper surface of the base semiconductor layer, a high-k dielectric node layer, and an upper electrode of a metal. The memory device further includes a pass transistor in electrical communication with the capacitor.
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