首页> 外国专利> METHODS OF FORMING A BARRIER SYSTEM CONTAINING AN ALLOY OF METALS INTRODUCED INTO THE BARRIER SYSTEM, AND AN INTEGRATED CIRCUIT PRODUCT CONTAINING SUCH A BARRIER SYSTEM

METHODS OF FORMING A BARRIER SYSTEM CONTAINING AN ALLOY OF METALS INTRODUCED INTO THE BARRIER SYSTEM, AND AN INTEGRATED CIRCUIT PRODUCT CONTAINING SUCH A BARRIER SYSTEM

机译:形成包含引入到屏障系统中的金属合金的屏障系统的方法,以及包含这种屏障系统的集成电路产品

摘要

One illustrative method disclosed herein includes forming a trench/via in a layer of insulating material, forming a barrier system comprised of at least one barrier material and at least two metallic elements, and performing a heating process to form a metal alloy comprised of the at least two metallic elements in the barrier system. Also disclosed is a device that comprises a trench/via in a layer of insulating material, a barrier system positioned in the trench/via, wherein the barrier system comprises at least one barrier material and a metal alloy comprised of at least two metallic elements that are comprised of materials other than the at least one barrier material, and a conductive structure positioned in the trench/via above the barrier system.
机译:本文公开的一种说明性方法包括:在绝缘材料层中形成沟槽/通孔;形成由至少一种阻挡材料和至少两种金属元素组成的阻挡系统;以及执行加热过程以形成由至少一部分阻挡层构成的金属合金。屏障系统中至少有两个金属元素。还公开了一种装置,该装置包括在绝缘材料层中的沟槽/通孔,位于沟槽/通孔中的阻挡系统,其中该阻挡系统包括至少一种阻挡材料和由至少两种金属元素构成的金属合金,包括至少一种阻挡材料的材料以及位于阻挡系统上方的沟槽/通孔中的导电结构。

著录项

  • 公开/公告号US2014291847A1

    专利类型

  • 公开/公告日2014-10-02

    原文格式PDF

  • 申请/专利权人 GLOBALFOUNDRIES INC.;

    申请/专利号US201313852084

  • 发明设计人 VIVIAN W. RYAN;XUNYUAN ZHANG;HOON KIM;

    申请日2013-03-28

  • 分类号H01L21/768;H01L23/532;H01L23/522;

  • 国家 US

  • 入库时间 2022-08-21 16:08:18

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