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METHOD OF FABRICATING RARE-EARTH ELEMENT DOPED PIEZOELECTRIC MATERIAL WITH VARIOUS AMOUNTS OF DOPANTS AND A SELECTED C-AXIS ORIENTATION
METHOD OF FABRICATING RARE-EARTH ELEMENT DOPED PIEZOELECTRIC MATERIAL WITH VARIOUS AMOUNTS OF DOPANTS AND A SELECTED C-AXIS ORIENTATION
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机译:具有各种掺杂量和选定C轴方向的稀土元素掺杂压电材料的制造方法
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摘要
A method of fabricating a rare-earth element doped piezoelectric material having a first component, a second component and the rare-earth element. The method includes: providing a substrate; initially flowing hydrogen over the substrate; after the initially flowing of the hydrogen over the substrate, flowing the first component to form the rare-earth element doped piezoelectric material over a surface of a single target, the target comprising the rare-earth metal in a certain atomic percentage; and sputtering the rare-earth element doped piezoelectric material from the target on the substrate.
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