首页> 外国专利> Semiconductor Device and Method of Forming Open Cavity in TSV Interposer to Contain Semiconductor Die in WLCSMP

Semiconductor Device and Method of Forming Open Cavity in TSV Interposer to Contain Semiconductor Die in WLCSMP

机译:半导体器件和在TSV中介层中形成开放腔以在WLCSMP中包含半导体管芯的方法

摘要

A semiconductor device is made by mounting a semiconductor wafer to a temporary carrier. A plurality of TSV is formed through the wafer. A cavity is formed partially through the wafer. A first semiconductor die is mounted to a second semiconductor die. The first and second die are mounted to the wafer such that the first die is disposed over the wafer and electrically connected to the TSV and the second die is disposed within the cavity. An encapsulant is deposited over the wafer and first and second die. A portion of the encapsulant is removed to expose a first surface of the first die. A portion of the wafer is removed to expose the TSV and a surface of the second die. The remaining portion of the wafer operates as a TSV interposer for the first and second die. An interconnect structure is formed over the TSV interposer.
机译:通过将半导体晶片安装到临时载体上来制造半导体器件。贯穿晶片形成多个TSV。腔体部分地穿过晶片形成。第一半导体管芯被安装到第二半导体管芯。第一管芯和第二管芯被安装到晶片,使得第一管芯被布置在晶片上方并且被电连接到TSV,并且第二管芯被布置在空腔内。密封剂沉积在晶片以及第一和第二管芯上方。去除密封剂的一部分以暴露第一管芯的第一表面。去除晶片的一部分以暴露TSV和第二管芯的表面。晶片的其余部分用作第一和第二芯片的TSV中介层。互连结构形成在TSV中介层上。

著录项

  • 公开/公告号US2013299974A1

    专利类型

  • 公开/公告日2013-11-14

    原文格式PDF

  • 申请/专利权人 STATS CHIPPAC LTD.;

    申请/专利号US201313943737

  • 发明设计人 HEEJO CHI;NAMJU CHO;HANGIL SHIN;

    申请日2013-07-16

  • 分类号H01L21/78;H01L23/498;

  • 国家 US

  • 入库时间 2022-08-21 16:07:46

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