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METHOD FOR PRODUCING A CAPPING LAYER COMPOSED OF SILICON OXIDE ON AN EUV MIRROR, EUV MIRROR, AND EUV LITHOGRAPHY APPARATUS
METHOD FOR PRODUCING A CAPPING LAYER COMPOSED OF SILICON OXIDE ON AN EUV MIRROR, EUV MIRROR, AND EUV LITHOGRAPHY APPARATUS
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机译：在EUV镜，EUV镜和EUV光刻设备上制备由氧化硅构成的覆盖层的方法
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摘要
A method for producing a capping layer (18) composed of silicon oxide SiOx on a coating (16) of a mirror (13), the coating reflecting EUV radiation (6) e.g. for use in an EUV lithography apparatus or in an EUV mask metrology system. The method includes irradiating a capping layer (18) composed of silicon nitride SiNx or composed of silicon oxynitride SiNxOy for converting the silicon nitride SiNx or the silicon oxynitride SiNxOy of the capping layer (18) into silicon oxide SiOx. An associated mirror (13) includes a capping layer comprised of silicon oxide SiOx, and can be provided in an associated EUV lithography apparatus.
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机译：一种在反射镜（）的涂层（ 16 ）上制造由氧化硅SiO x 组成的覆盖层（ 18 ）的方法13 ），反射EUV辐射（ 6 ）的涂层，例如用于EUV光刻设备或EUV掩模计量系统。该方法包括照射由氮化硅SiN x 组成或由氮氧化硅SiN x O y <组成的覆盖层（ 18 ） / Sub>用于转换覆盖层（ 18 的氮化硅SiN x 或氮氧化硅SiN x O y B>）变成氧化硅SiO x 。关联的反射镜（ 13 ）包括由氧化硅SiO x 组成的覆盖层，并且可以设置在关联的EUV光刻设备中。
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