PIXEL STRUCTURE, METHOD OF MANUFACTURING PIXEL STRUCTURE, AND ACTIVE DEVICE MATRIX SUBSTRATE

摘要

A pixel structure, a method of manufacturing the pixel structure, and an active device matrix substrate are provided. The pixel structure includes a first patterned metal layer having a common line and a gate; a first insulation layer; a semiconductor pattern; a second patterned metal layer having a source and a drain both electrically connected to the semiconductor pattern; a second insulation layer having a contact opening exposing the drain; and an electrode layer having a common electrode, and a pixel electrode connected to the drain through the contact opening. The common line, the first insulation layer, and the pixel electrode constitute a first storage capacitor. The common line, the drain, and the common electrode constitute a sandwich structure.;The common line, the first insulation layer, and the drain constitute a second storage capacitor. The drain, the second insulation layer, and the common electrode constitute a third storage capacitor.