首页> 外国专利> METHOD AND SYSTEM FOR OPTOELECTRONIC RECEIVERS UTILIZING WAVEGUIDE HETEROJUNCTION PHOTOTRANSISTORS INTEGRATED IN A CMOS SOI WAFER

METHOD AND SYSTEM FOR OPTOELECTRONIC RECEIVERS UTILIZING WAVEGUIDE HETEROJUNCTION PHOTOTRANSISTORS INTEGRATED IN A CMOS SOI WAFER

机译:利用集成在CMOS SOI晶圆中的波导异质结光敏晶体管实现光电子接收器的方法和系统

摘要

A method and system for optoelectronic receivers utilizing waveguide heterojunction phototransistors (HPTs) integrated in a CMOS SOI wafer are disclosed and may include receiving optical signals via a top surface of a photonically-enabled CMOS chip; and generating electrical signals in the chip utilizing one or more HPTs that detect optical signals. The HPTs may comprise a base and a split collector, with the split collector comprising a silicon-on-insulator (SOI) layer and a germanium layer. The thickness of the germanium layer may be such that carriers in the base do not interact with defects from an interface between the SOI layer and the germanium layer. The electrical signals may be amplified by amplifiers, the outputs of which may be utilized to bias the HPTs by a feedback network. An electrode formed longitudinally in the direction of light travel through the HPTs may bias the base of the HPTs.
机译:公开了一种用于利用集成在CMOS SOI晶片中的波导异质结光电晶体管(HPT)的光电接收器的方法和系统,该方法和系统可以包括经由光子使能的CMOS芯片的顶面接收光信号;利用一个或多个检测光信号的HPT在芯片中产生电信号。 HPT可以包括基极和分裂集电极,该分裂集电极包括绝缘体上硅(SOI)层和锗层。锗层的厚度可以使得基底中的载流子不与来自SOI层和锗层之间的界面的缺陷相互作用。电信号可以由放大器放大,放大器的输出可以被反馈网络用来偏置HPT。在光穿过HPT的方向上纵向形成的电极可能会偏压HPT的底部。

著录项

  • 公开/公告号US2014084144A1

    专利类型

  • 公开/公告日2014-03-27

    原文格式PDF

  • 申请/专利权人 GIANLORENZO MASINI;SUBAL SAHNI;

    申请/专利号US201314091259

  • 发明设计人 GIANLORENZO MASINI;SUBAL SAHNI;

    申请日2013-11-26

  • 分类号H01L31/11;

  • 国家 US

  • 入库时间 2022-08-21 16:07:22

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