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Low temperature migration enhanced Si-Ge epitaxy with plasma assisted surface activation
Low temperature migration enhanced Si-Ge epitaxy with plasma assisted surface activation
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机译:低温迁移增强了Si-Ge外延,并具有等离子体辅助表面活化作用
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摘要
Epitaxial films are grown by alternately exposed to precursor dosing regions, inert gas plasma regions, hydrogen-containing plasma regions, chlorine-containing plasma and metrology regions, or regions where an atomic hydrogen source is located. Alternately, laser irradiation techniques may be substituted for the plasma energy in some of the processing regions. The film growth process can be implemented at substrate temperatures between about 25 C and about 600 C, together with optional exposures to laser irradiation to cause the surface of the film to melt or to experience a near-melt condition.
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