Room-temperature magnetoelectric multiferroic thin films and applications thereof

摘要

The invention provides a novel class of room-temperature, single-phase, magnetoelectric multiferroic (PbFe_0.67W_0.33O₃)_x (PbZr_0.53Ti_0.47O₃)_1-x (0.2≦x≦0.8) (PFW_x−PZT_1-x) thin films that exhibit high dielectric constants, high polarization, weak saturation magnetization, broad dielectric temperature peak, high-frequency dispersion, low dielectric loss and low leakage current. These properties render them to be suitable candidates for room-temperature multiferroic devices. Methods of preparation are also provided.