MULTI-BANK RANDOM ACCESS MEMORY STRUCTURE WITH GLOBAL AND LOCAL SIGNAL BUFFERING FOR IMPROVED PERFORMANCE

摘要

Disclosed are embodiments of a multi-bank random access memory (RAM) structure that provides signal buffering at both the global and local connector level for improved performance. Specifically, inverters are incorporated into the global connector(s), which traverse groups of memory banks and which transmit signals (e.g., address signals, control signals, and/or data signals) from a memory controller, and also into alternating groups of local connectors, which connect nodes on the global connector(s) to corresponding groups of memory banks, such that any of the signals that are received by the memory banks from the memory controller via the global and local connectors are buffered by an even number of inverters and are thereby true signals. Signal buffering at both the global and local connector level results in relatively fast slews, short propagation delays, and low peak power consumption with minimal, if any, increase in area consumption.