首页> 外国专利> DECODING SCHEME FOR BIPOLAR-BASED DIODE THREE-DIMENSIONAL MEMORY REQUIRING UNIPOLAR PROGRAMMING

DECODING SCHEME FOR BIPOLAR-BASED DIODE THREE-DIMENSIONAL MEMORY REQUIRING UNIPOLAR PROGRAMMING

机译:需要双极性编程的基于双极的二维三维存储器的解码方案

摘要

A system and method for operating a unipolar memory cell array including a bidirectional access diode. An example embodiment is a method including determining if the operating state of the unipolar memory cell is in a select state or a deselect state and the programming state is a read state or a write state. The method switches a column voltage switch based on the operating state and the programming state of the unipolar memory cell. The method further switches a row voltage switch based on the operating state and the programming state of the unipolar memory cell.
机译:一种用于操作包括双向存取二极管的单极存储单元阵列的系统和方法。示例实施例是一种方法,其包括确定单极存储单元的操作状态是处于选择状态还是取消选择状态,并且编程状态是读取状态还是写入状态。该方法基于单极存储单元的操作状态和编程状态来切换列电压开关。该方法还基于单极存储单元的操作状态和编程状态来切换行电压开关。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号