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SILICON-BASED VISIBLE AND NEAR-INFRARED OPTOELECTRIC DEVICES
SILICON-BASED VISIBLE AND NEAR-INFRARED OPTOELECTRIC DEVICES
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机译:基于硅的可见光和近红外光电设备
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摘要
In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1. A/W for longer wavelengths, e.g., up to about 3.5 microns.
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机译:一方面,本发明提供一种硅光电探测器,该硅光电探测器具有掺杂有硫夹杂物的表面层,所述硫夹杂物的平均浓度在大约0.5原子百分比至大约1.5原子百分比的范围内。表面层与衬底的下面部分形成二极管结。多个电触点允许向结施加反向偏置电压,以便于响应于表面层的辐照而产生电信号,例如光电流。对于在约250nm至约1050nm范围内的入射波长,光电检测器表现出大于约1A / W的响应度,以及大于约0.1的响应度。 A / W适用于更长的波长,例如最大约3.5微米。
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