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Solid state lighting devices having side reflectivity and associated methods of manufacture

机译:具有侧面反射率的固态照明设备及其制造方法

摘要

Solid state lighting devices having side reflectivity and associated methods of manufacturing are disclosed herein. In one embodiment, a method of forming a solid state lighting device includes attaching a solid state emitter to a support substrate, mounting the solid state emitter and support substrate to a temporary carrier, and cutting kerfs through the solid state emitter and the substrate to separate individual dies. The solid state emitter can have a first semiconductor material, a second semiconductor material, and an active region between the first and second semiconductor materials. The individual dies can have sidewalls that expose the first semiconductor material, active region and second semiconductor material. The method can further include applying a reflective material into the kerfs and along the sidewalls of the individual dies.
机译:本文公开了具有侧面反射率的固态照明装置以及相关的制造方法。在一个实施例中,一种形成固态照明装置的方法包括:将固态发射器附接到支撑基板;将固态发射器和支撑基板安装到临时载体;以及切开切口,穿过固态发射器和基板以分离。个人死亡。固态发射极可以具有第一半导体材料,第二半导体材料以及在第一半导体材料和第二半导体材料之间的有源区。各个管芯可以具有暴露第一半导体材料,有源区和第二半导体材料的侧壁。该方法可以进一步包括将反射材料沿着各个模具的侧壁施加到切口中。

著录项

  • 公开/公告号US8729590B2

    专利类型

  • 公开/公告日2014-05-20

    原文格式PDF

  • 申请/专利权人 MICRON TECHNOLOGY INC.;

    申请/专利号US201313870740

  • 发明设计人 JASPREET S. GANDHI;TONGBI JIANG;

    申请日2013-04-25

  • 分类号H01L33;

  • 国家 US

  • 入库时间 2022-08-21 16:04:01

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