METHOD FOR FORMING THIN METAL COMPOUND FILM AND SEMICONDUCTOR STRUCTURE WITH THIN METAL COMPOUND FILM

摘要

A method for forming a metal compound film includes: providing a substrate structure; forming a first metal layer on the substrate structure; performing a first microwave annealing process to conduct a reaction between the first metal layer and the substrate structure so as to form a first polycrystalline film of a metal compound; and performing a second microwave annealing process to transform the first polycrystalline film into a second polycrystalline film of the metal compound with an enlarged grain size, wherein a microwave power output used in the second microwave annealing process is higher than that used in the first microwave annealing process.