首页> 外国专利> PROCESS GAS FLOW GUIDES FOR LARGE AREA PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION SYSTEMS AND METHODS

PROCESS GAS FLOW GUIDES FOR LARGE AREA PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION SYSTEMS AND METHODS

机译:大面积等离子体增强化学气相沉积系统和方法的工艺流程指南

摘要

The present invention provides methods and apparatus for a gas diffusion assembly in a deposition processing chamber. The invention includes a backing plate having an inlet for providing a process gas to a process chamber, a diffusion plate including a plurality of apertures for allowing the process gas to flow into the process chamber, a blocking plate disposed between the backing plate and the diffusion plate and including a plurality of apertures, and at least one gas flow guide disposed between the blocking plate and the backing plate and adapted to direct process gas flow laterally. Numerous additional features are disclosed.
机译:本发明提供了用于在沉积处理室中的气体扩散组件的方法和设备。本发明包括:背板,其具有用于向处理室提供处理气体的入口;扩散板,其包括用于使处理气体流入处理室的多个孔;隔板,其设置在背板和扩散之间板并包括多个孔,以及至少一个气流引导件,该气流引导件设置在挡板和背板之间并且适于横向引导工艺气流。公开了许多附加特征。

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