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Strain induced reduction of switching current in spin-transfer torque switching devices
Strain induced reduction of switching current in spin-transfer torque switching devices
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机译:自旋传递转矩开关装置中的应变引起的开关电流的减小
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摘要
Partial perpendicular magnetic anisotropy (PPMA) type magnetic random access memory cells are constructed using processes and structural configurations that induce a directed static strain/stress on an MTJ to increase the perpendicular magnetic anisotropy. Consequently, reduced switching current of the MTJ results. The directed static strain/stress on the MTJ is induced in a controlled direction and/or with a controlled magnitude during fabrication. The MTJ is permanently subject to a predetermined directed stress and permanently includes the directed static strain/strain that provides reduced switching current.
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