STRAIN INDUCED REDUCTION OF SWITCHING CURRENT IN SPINTRANSFER TORQUE SWITCHING DEVICES

摘要

Partial perpendicular magnetic anisotropy (PPMA) type magnetic random access memo ry cells are constructed using processes and structural configurations that induce a directed static strain/stress on an MTJ (202) to increase the perpendicular magnetic anisotropy. Consequently reduced switching current of the MTJ results. The directed static strain/stress on the MTJ is induced in a controlled direction (236 234) and/or with a controlled magnitude during fabrication. The MTJ is permanently subject to a predetermined directed stress (228) and permanently includes the directed static strain/strain that provides reduced switching current.