Seek-scan probe (SSP) memory with sharp probe tips formed at CMOS-compatible temperatures

摘要

Embodiments of a process comprising forming one or more micro-electro-mechanical (MEMS) probe on a conductive metal oxide semiconductor (CMOS) wafer, wherein each MEMS probe comprises a cantilever beam with a fixed end and a free end and wherein the CMOS wafer has circuitry thereon; forming an unsharpened tip at or near the free end of each cantilever beam; depositing a silicide-forming material over the tip; annealing the wafer to sharpen the tip; and exposing the sharpened tip. Embodiments of an apparatus comprising a conductive metal oxide semiconductor (CMOS) wafer including circuitry therein; one or more micro-electro-mechanical (MEMS) probes integrally formed on the CMOS wafer, wherein each MEMS probe comprises a cantilever beam with a fixed end and a free end and a sharpened tip at or near the free end, the sharpened tip formed by a process comprising forming an unsharpened tip at or near the free end of each cantilever beam, depositing a silicide-forming material over the unsharpened tip, annealing the wafer to sharpen the unsharpened tip, and exposing the sharpened tip.