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Magnetic memory with phonon glass electron crystal material
Magnetic memory with phonon glass electron crystal material
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机译:声子玻璃电子晶体材料的磁记忆
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摘要
A magnetic memory unit includes a tunneling barrier separating a free magnetic element and a reference magnetic element. A first phonon glass electron crystal layer is disposed on a side opposing the tunneling barrier of either the free magnetic element or the reference magnetic element. A second phonon glass electron crystal layer also be disposed on a side opposing the tunneling barrier of either the free magnetic element or the reference magnetic element to provide a Peltier effect on the free magnetic element and the reference magnetic element.
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