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Combined simultaneous sensing of multiple wordlines in a post-write read (PWR) and detection of NAND failures
Combined simultaneous sensing of multiple wordlines in a post-write read (PWR) and detection of NAND failures
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机译:在写后读取(PWR)中组合同时感测多个字线和检测NAND故障
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摘要
Techniques for a post-write read are presented. In an exemplary embodiment, a combined simultaneous sensing of multiple word lines is used in order to identify a problem in one or more of these word lines. That is, sensing voltages are concurrently applied to the control gates of more than one memory cell whose resultant conductance is measured on the same bit line. The combined sensing result is use for measuring certain statistics of the cell voltage distribution (CVD) of multiple word lines and comparing it to the expected value. In case the measured statistics are different than expected, this may indicate that one or more of the sensed word lines may exhibit a failure and more thorough examination of the group of word lines can be performed.
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