首页> 外国专利> Transflective liquid crystal display device with barrier metal layer between ohmic-contact layer and source/drain electrode patterns and fabrication method thereof

Transflective liquid crystal display device with barrier metal layer between ohmic-contact layer and source/drain electrode patterns and fabrication method thereof

机译:在欧姆接触层和源/漏电极图案之间具有阻挡金属层的透反射液晶显示装置及其制造方法

摘要

A trans-reflective LCD and a manufacturing method thereof are provided to simplify a manufacturing process and improve yield by reducing the number of masks and implement high definition by preventing wavy noise. A first substrate divided into a pixel unit and first and second pad units is provided. Through a first mask process, a gate electrode and a gate line are formed in the pixel unit of the first substrate. Through a second mask process, an active pattern of an island type is formed on the gate electrode in a state when a first insulating layer is interposed. On the active pattern, an n+ amorphous silicon thin film pattern and a conductive layer pattern are formed. Through a third mask process, a source electrode and a drain electrode are formed in the pixel unit of the first substrate. A data line crosses the gate line to define a pixel area comprising a reflection unit and a transmission unit. Through the third mask process, a pixel electrode comprising a transparent conductive layer is formed in the transmission unit of the pixel area. Through a fourth mask process, a second insulating layer is formed on the first substrate. Through a fifth process, a reflection electrode comprising an opaque conductive layer is formed in the reflection unit of the pixel area. The first substrate is deposited with a second substrate.
机译:提供一种透反射式LCD及其制造方法,以通过减少掩模的数量来简化制造工艺并提高产量,并且通过防止波浪噪声来实现高清晰度。提供了被划分为像素单元的第一基板以及第一焊盘单元和第二焊盘单元。通过第一掩模工艺,在第一基板的像素单元中形成栅电极和栅线。通过第二掩模工艺,在插入第一绝缘层的状态下,在栅电极上形成岛型的有源图案。在有源图案上,形成n +非晶硅薄膜图案和导电层图案。通过第三掩模工艺,在第一基板的像素单元中形成源电极和漏电极。数据线与栅极线交叉以限定包括反射单元和透射单元的像素区域。通过第三掩模工艺,在像素区域的透射单元中形成包括透明导电层的像素电极。通过第四掩模工艺,在第一基板上形成第二绝缘层。通过第五工艺,在像素区域的反射单元中形成包括不透明导电层的反射电极。在第一衬底上沉积第二衬底。

著录项

  • 公开/公告号US8634036B2

    专利类型

  • 公开/公告日2014-01-21

    原文格式PDF

  • 申请/专利权人 DONG-YUNG KIM;BYOUNG-HO LIM;

    申请/专利号US20070003437

  • 发明设计人 BYOUNG-HO LIM;DONG-YUNG KIM;

    申请日2007-12-26

  • 分类号G02F1/136;G09G3/36;H01L29/04;

  • 国家 US

  • 入库时间 2022-08-21 15:59:52

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