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Solar cells fabricated by using CVD epitaxial Si films on metallurgical-grade Si wafers
Solar cells fabricated by using CVD epitaxial Si films on metallurgical-grade Si wafers
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机译:通过在冶金级Si晶片上使用CVD外延Si膜制造的太阳能电池
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摘要
One embodiment of the present invention provides a method for fabricating a solar cell. The method includes: melting a metallurgical-grade (MG) Si feedstock, lowering a single-crystalline Si seed to touch the surface of the molten MG-Si, slowly pulling out a single-crystal Si ingot of the molten MG-Si, processing the Si ingot into single crystal Si wafers to form MG-Si substrates for subsequent epitaxial growth, leaching out residual metal impurities in the MG-Si substrate, epitaxially growing a layer of single-crystal Si thin film doped with boron on the MG-Si substrate, doping phosphor to the single-crystal Si thin film to form an emitter layer, depositing an anti-reflection layer on top of the single-crystal Si thin film, and forming the front and the back electrical contacts.
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