首页> 外国专利> USE OF SURFACTANTS HAVING AT LEAST THREE SHORT CHAIN PERFLUORINATED GROUPS FOR MANUFACTURING INTEGRATED CIRCUITS HAVING PATTERNS WITH LINE SPACE DIMENSIONS BELOW 50NM

USE OF SURFACTANTS HAVING AT LEAST THREE SHORT CHAIN PERFLUORINATED GROUPS FOR MANUFACTURING INTEGRATED CIRCUITS HAVING PATTERNS WITH LINE SPACE DIMENSIONS BELOW 50NM

机译:使用至少具有三个短链渗透基团的表面活性剂来制造具有50NM以下线型尺寸的图案的集成电路

摘要

The use of surfactants A the 1% by weight aqueous solutions of which exhibit a static surface tension 25 mN/m the said surfactants A containing at least three short chain perfluorinated groups Rf selected from the group consisting of trifluoromethyl pentafluoroethyl 1 heptafluoropropyl 2 heptafluoropropyl heptafluoroisopropyl and pentafluorosulfanyl; for manufacturing integrated circuits comprisingpatternshaving line space dimensions below 50 nm and aspect ratios 3; and a photolithographic process making use of the surfactants A in immersion photoresist layers photoresist layers exposed to actinic radiation developer solutions for the exposed photoresist layers and/or in chemical rinse solutions for developed patterned photoresistscomprisingpatterns having line space dimensions below 50 nm and aspect ratios 3.By way of the surfactants A pattern collapse is prevented line edge roughness is reduced watermark defects are prevented and removed and defects are reduced by removing particles.
机译:表面活性剂A的使用,所述表面活性剂A的1重量%水溶液的静态表面张力<25mN / m,所述表面活性剂A包含至少三个选自三氟甲基五氟乙基1七氟丙基2七氟丙基七氟异丙基的短链全氟基团Rf。和五氟硫烷基;用于制造集成电路,所述集成电路具有以下图案:将线间距尺寸小于50nm且纵横比大于3;以及在表面光致抗蚀剂层中使用表面活性剂A的光刻工艺,该光致抗蚀剂层在暴露于光化辐射显影剂溶液中的曝光的光致抗蚀剂层中和/或在化学漂洗溶液中用于显影的图案化光致抗蚀剂,所述图案化光致抗蚀剂包括具有小于50 nm的行空间尺寸且纵横比> 3通过表面活性剂的方式,防止图案塌陷,减少线边缘粗糙度,减少并防止水印缺陷,并通过除去颗粒减少缺陷。

著录项

  • 公开/公告号IN2013CN05693A

    专利类型

  • 公开/公告日2014-08-29

    原文格式PDF

  • 申请/专利权人

    申请/专利号IN5693/CHENP/2013

  • 发明设计人 KLIPP ANDREAS;MAYER DIETER;

    申请日2013-07-17

  • 分类号G03F7/20;C09K13/08;G03F7/32;

  • 国家 IN

  • 入库时间 2022-08-21 15:57:32

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