METHOD FOR DIAGNOSTICS AND CHARACTERIZATION OF LED GaN STRUCTURES BY ELECTRIC LUMINESCENCE OF MICROPLASMA

摘要

A method for diagnostics and characteristic of LED GaN structures includes application of constant reverse voltage to the LED structure, with recording of mycoplasma luminescence. The value of reverse voltage is increased to maximal possible non-destructive value, with measurement of the spectrum of electric luminescence of all the mycoplasmas. By the value of intensity of electric luminescence and the value of the ratio of the intensities of maxima of the blue and yellow bands of the spectrum of luminescence the LED GaN structures are characterized with evaluation of reliability of those.