首页> 外国专利> ELECTRODE SUBSTRATE FOR PHOTOELECTRIC CONVERSION DEVICE, METHOD FOR MANUFACTURING ELECTRODE SUBSTRATE FOR PHOTOELECTRIC CONVERSION DEVICE, AND PHOTOELECTRIC CONVERSION DEVICE

ELECTRODE SUBSTRATE FOR PHOTOELECTRIC CONVERSION DEVICE, METHOD FOR MANUFACTURING ELECTRODE SUBSTRATE FOR PHOTOELECTRIC CONVERSION DEVICE, AND PHOTOELECTRIC CONVERSION DEVICE

机译:用于光电转换设备的电极基质,制造用于光电转换设备的电极基质的方法以及光电转换设备

摘要

A method of manufacturing an electrode substrates for a photoelectric conversion element which includes: forming a transparent conductive layer and a collector wire on a substrate; forming a porous oxide semiconductor layer on different portions of the transparent conductive layer from portions on which the collector wire is formed; firing the porous oxide semiconductor layer; forming a protective layer composed of an insulating resin having thermal resistance at 250 °C or higher so as to cover the collector wire after the firing; and after forming the protective layer, allowing adsorption of dyes in the porous oxide semiconductor layer, and heating the substrate at 250 °C or higher during or after the formation of the protective layer and before allowing adsorption of the dyes in the porous oxide semiconductor layer.
机译:一种用于光电转换元件的电极基板的制造方法,其包括:在基板上形成透明导电层和集电极线;以及在所述基板上形成透明导电层。在透明导电层的与形成集电极线的部分不同的部分上形成多孔氧化物半导体层;烧结多孔氧化物半导体层;形成由绝缘树脂构成的保护层,该绝缘层具有在250℃以上的耐热性,以在烧成后覆盖集电线。在形成保护层之后,使染料吸附在多孔氧化物半导体层中,并且在形成保护层期间或之后以及在使染料吸附在多孔氧化物半导体层中之前,将基板加热至250℃以上。 。

著录项

  • 公开/公告号EP2214250A4

    专利类型

  • 公开/公告日2014-03-05

    原文格式PDF

  • 申请/专利权人 FUJIKURA LTD.;

    申请/专利号EP20080849218

  • 发明设计人 MATSUI HIROSHI;OKADA KENICHI;

    申请日2008-11-14

  • 分类号H01M14;H01G9/20;H01L31/04;H01M2/22;

  • 国家 EP

  • 入库时间 2022-08-21 15:50:46

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