首页> 外国专利> STRUCTURE, CHIP FOR LOCALIZED SURFACE PLASMON RESONANCE SENSOR, LOCALIZED SURFACE PLASMON RESONANCE SENSOR, AND MANUFACTURING METHODS THEREFOR

STRUCTURE, CHIP FOR LOCALIZED SURFACE PLASMON RESONANCE SENSOR, LOCALIZED SURFACE PLASMON RESONANCE SENSOR, AND MANUFACTURING METHODS THEREFOR

机译:局部表面等离激元传感器的结构,芯片,局部表面等离激元传感器的制造方法

摘要

Implemented is a chip for localized surface plasmon resonance sensor, which is able to provide a localized surface plasmon resonance sensor of higher sensitivity. A structure of the invention is characterized by including a planar section and tubular bodies, wherein the tubular bodies are vertically arranged so that openings thereof open at the planar surface of the planar section, an average inner diameter of the openings of the tubular bodies is within a range of from 5 nm to 2,000 nm, a ratio (A/B) of inner diameter A of the openings of the tubular bodies and inner diameter B at the midpoint of the depth from the openings of the tubular bodies is within a range of from 1.00 to 1.80, and the bottom of the tubular bodies is aspherical.
机译:实现了用于局部表面等离子体共振传感器的芯片,其能够提供更高灵敏度的局部表面等离子体共振传感器。本发明的结构的特征在于,包括平面部和管状体,其中,管状体垂直地布置,使得其开口在平面部的平坦表面处开口,管状体的开口的平均内径在在5nm至2,000nm的范围内,管状体的开口的内径A与距管状体的开口的深度的中点处的内径B的比(A / B)在以下范围内:从1.00到1.80,并且管状主体的底部是非球面的。

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