METHOD FOR ETCHING SEMICONDUCTOR SUBSTRATE, ETCHING LIQUID, METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT, AND ETCHING LIQUID KIT

摘要

In this etching method wherein a substrate having a first layer that contains titanium nitride (TiN) and a second layer that contains a transition metal is processed using a single wafer-type apparatus, the first layer is preferentially removed by bringing an etching liquid, which has a pH of 1 or more and contains an oxidant and a specific fluorine compound that is selected from among metal salts and ammonium salts of hydrofluoric acid, into contact with the substrate.