METHOD FOR PREPARING THIN FILM TRANSISTOR, METHOD FOR PREPARING THIN FILM TRANSISTOR DRIVING BACK PANEL, AND THIN FILM TRANSISTOR DRIVING BACK PANEL

摘要

Provided is a process for preparing a thin film transistor, which comprises: a. precipitating and patterning a metal conducting layer as a gate metal layer (03B) on a substrate (01); b. precipitating a first insulation thin film as a gate insulation layer (04) on the gate metal layer (03B); c. precipitating and patterning a metal oxide thin film as an active layer (05) on the gate insulation layer (04); d. precipitating a second insulation thin film on the active layer (05), and using a self-aligned exposure method to pattern the second insulation thin film as an etching barrier layer (06); e. precipitating a third insulation thin film as a protection layer (07) on the etching barrier layer (06), patterning the third insulation thin film, and forming a source-drain area by etching; and f. preparing and patterning a metal thin film layer (08) as a connecting wire on the protection layer (07). The process for preparing a thin film transistor is simple; and the prepared thin film transistor has good stability and a small size, and can achieve highly precise and low-cost manufacturing of a thin film transistor driving back panel. Also provided are a method for preparing a thin film transistor driving back panel and the prepared driving back panel.