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MODE-LOCKED SEMICONDUCTOR LASER DIODE WITH DISPERSION-COMPENSATED EXTERNAL CAVITY
MODE-LOCKED SEMICONDUCTOR LASER DIODE WITH DISPERSION-COMPENSATED EXTERNAL CAVITY
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机译：具有色散补偿外腔的锁模半导体激光二极管
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摘要
PROBLEM TO BE SOLVED: To provide a current-injection semiconductor laser device assembly having a configuration and structure which can output ultrashort pulse laser beams.;SOLUTION: The semiconductor laser device assembly comprises (A) a current-injection mode-locked semiconductor laser element 10 having an optical density of 10 GW/cm2 or greater and a carrier density of 1×1019/cm3 or greater, and (B) a dispersion compensation optical system 110 which receives and emits laser beams emitted from the mode-locked semiconductor laser element 10.;COPYRIGHT: (C)2013,JPO&INPIT
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机译：解决的问题：提供一种具有能够输出超短脉冲激光束的构造和结构的电流注入半导体激光器件组件;解决方案：该半导体激光器件组件包括（A）电流注入锁模半导体激光器元件。 10的光密度为10 GW / cm 2 或更高，载流子密度为1×10 19 / cm 3 或更高， （B）色散补偿光学系统110，该色散补偿光学系统110接收并发射从锁模半导体激光元件10发射的激光束。;版权所有：（C）2013，JPO＆INPIT
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