BORON-DOPED REDUCTION GRAPHINE OF ADJUSTING PHYSICAL PROPERTIES OF SEMICONDUCTOR AND ELECTRIC CONDUCTIVITY, AND PREPARATION THEREOF

摘要

The present invention relates to the reduced graphene of boron be adjustable physical characteristic semiconductor and conductivity and its manufacturing method and, it is preferable that a kind of bulk method. Boron doping graphene reduction according to the present invention shows excellent electric conductivity and improved stability and is usefully used for graphene semiconductor since the reduced graphene of boron shows p-type characteristic. Reduced graphene environmental protection according to the present invention is manufactured, technique is simplified, reduces production cost, convenient for large-scale production, and adjust the semiconductor and conductivity of physical property, to be efficiently used for manufacture graphene semiconductor. ;The 2014 of copyright KIPO submissions;[Reference numerals] (AA) manufactures the graphene oxide and boron oxide of dispersion; (BB) solid mixture of graphene oxide boron oxide compound is manufactured; (CC) reduction and doping pass through heat treatment; (DD) Washing and residual boron oxide has been dried