首页> 外国专利> Method for generating coarse-grained structures, use of said method and coarse-grained structure

Method for generating coarse-grained structures, use of said method and coarse-grained structure

机译:产生粗粒结构的方法,所述方法和粗粒结构的用途

摘要

Generation of coarse-grained structure on crystalline base substrate involves successively applying coating layers (1a)-(1n) of primary grains (20) having primary grain size (10) by laser beam deposit welding with primary process parameter, such that the coating layers are not epitaxially grown to prevent cracking, and irradiating the coating layers (40) at melting point by laser beam with secondary process parameter, such that melting of all or one portion of coating layers is accomplished to generate secondary grains (30) with secondary grain size (110). Generation of coarse-grained structure on crystalline base substrate involves successively applying coating layers of primary grains having primary grain size by laser beam deposit welding with primary process parameter, such that the coating layers are not epitaxially grown to prevent cracking, and irradiating the coating layers at melting point by laser beam with secondary process parameter, such that melting of all or one portion of coating layers is accomplished to generate secondary grains with secondary grain size. The secondary grains are obtained partly from primary grains of coating layers at the melting point. An independent claim is included for application of generation of coarse-grained structure on crystalline base substrate.
机译:在晶体基础基板上产生粗晶粒结构包括通过具有主要工艺参数的激光束沉积焊接依次施加具有初级晶粒尺寸(10)的初级晶粒(20)的涂层(1a)-(1n),使得涂层不外延生长以防止破裂,并用具有二次加工参数的激光束在熔点处对涂层(40)进行辐照,从而完成全部或一部分涂层的熔融以产生具有二次晶粒的二次晶粒(30)。大小(110)。在晶体基础基板上产生粗晶粒结构包括通过具有主要工艺参数的激光束沉积焊接依次涂覆具有一次晶粒尺寸的一次晶粒的涂层,使得不外延生长涂层以防止破裂,并照射涂层。通过具有二次加工参数的激光束在熔点处达到第二熔点,使得完成全部或一部分涂层的熔融,以产生具有二次晶粒尺寸的二次晶粒。次级晶粒部分地从涂层的熔点处的初级晶粒获得。包括一个独立的权利要求,用于在晶体基础衬底上产生粗晶粒结构。

著录项

  • 公开/公告号EP2783789A1

    专利类型

  • 公开/公告日2014-10-01

    原文格式PDF

  • 申请/专利权人 SIEMENS AKTIENGESELLSCHAFT;

    申请/专利号EP20130161358

  • 申请日2013-03-27

  • 分类号B23K26/34;B23P6;B29C67;C21D9/50;B22F3/105;

  • 国家 EP

  • 入库时间 2022-08-21 15:44:42

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号