首页> 外国专利> Method for forming nanostructure or poly silicone using microheater, nanostructure or poly silicone formed by the method and electronic device using the same

Method for forming nanostructure or poly silicone using microheater, nanostructure or poly silicone formed by the method and electronic device using the same

机译:使用微加热器形成纳米结构或聚硅氧烷的方法,通过该方法形成的纳米结构或聚硅氧烷以及使用该方法的电子设备

摘要

The present invention significantly reduces power consumption and large-area artist as micro- heater unit or array , carbon nanotubes , to grow the nanostructures of the gallium zinc oxide nanowire or nanowires , or how to convert the amorphous silicon into polycrystalline silicon , this invention relates to nanostructured or polycrystalline silicon and electronic apparatus using those formed in accordance with . According to the invention , the processing equipment without the need for a separate high temperature local to the carbon nanotubes , GaN nanowire , the nano- structure or a polycrystalline silicon such as a zinc oxide nanowire can be particularly formed in a low power consumption and a large area .
机译:作为微加热器单元或阵列,碳纳米管,用于生长氧化镓锌纳米线或纳米线的纳米结构或如何将非晶硅转化为多晶硅的方法,本发明显着降低了功耗和大面积艺术家。纳米结构的或多晶硅和电子装置,使用依照。根据本发明,可以特别以低功耗和低成本地形成不需要碳纳米管,GaN纳米线,纳米结构或诸如氧化锌纳米线之类的多晶硅的局部高温的处理设备。大面积 。

著录项

  • 公开/公告号KR101338350B1

    专利类型

  • 公开/公告日2013-12-31

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20070071355

  • 申请日2007-07-16

  • 分类号B82B3/00;

  • 国家 KR

  • 入库时间 2022-08-21 15:44:07

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号