首页> 外国专利> OPERATING METHOD OF MEMORY SYSTEM INCLUDING NONVOLATILE RANDOM ACCESS MEMORY AND NAND FLASH MEMORY

OPERATING METHOD OF MEMORY SYSTEM INCLUDING NONVOLATILE RANDOM ACCESS MEMORY AND NAND FLASH MEMORY

机译:包含非易失性随机访问存储器和NAND闪存的存储器系统的操作方法

摘要

The present invention relates to an operating method of a memory system including a non-volatile random access memory and a NAND flash memory. The operating method of the present invention comprises the steps of: receiving a read request of the NAND flash memory; reading from the NAND flash memory in response to the read request; and re-reading according to a re-reading scheme of the NAND flash memory if read fails, and storing pass information associated to a read pass of re-read into the non-volatile random access memory.
机译:本发明涉及一种包括非易失性随机存取存储器和NAND闪存的存储系统的操作方法。本发明的操作方法包括以下步骤:接收与非闪存的读取请求;以及响应于读取请求,从NAND闪存中读取;如果读取失败,则根据所述NAND闪存的重读方案进行重读,并将与重读的读遍相关联的遍信息存储在非易失性随机存取存储器中。

著录项

  • 公开/公告号KR20140020056A

    专利类型

  • 公开/公告日2014-02-18

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号KR20120086443

  • 发明设计人 KIM BO GEUN;

    申请日2012-08-07

  • 分类号G11C16/34;G11C16/26;

  • 国家 KR

  • 入库时间 2022-08-21 15:43:38

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