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NANOWIRE, NANOWIRE GRID STRUCTURE, AND METHOD FOR MANUFACTURING NANOWIRE

机译:NANOWIRE,NANOWIRE网格结构以及制造NANOWIRE的方法

摘要

The present invention relates to a method for manufacturing a nanowire. The method includes steps of forming a plurality of grid patterns on a substrate, forming a sacrificial layer on the grid patterns, forming a nanowire base layer which has at least one blackening layer on the grid patterns with the sacrificial layer, and separating the nanowire base layer from the grid patterns by etching the sacrificial layer. According to the present invention, the method can mass-produce nanowires at low costs and can improve the visibility of a display device when the produced nanowires are applied to a transparent electrode.;COPYRIGHT KIPO 2014;[Reference numerals] (AA) Start; (BB) End; (S10) Step for forming a plurality of grid patterns on a substrate; (S30) Step for forming a sacrificial layer on the grid patterns; (S50) Step for forming a nanowire base layer which has at least one blackening layer on the grid patterns with the sacrificial layer; (S70) Step for separating the nanowire base layer by etching the sacrificial layer; (S90) Step for separating nanowires from the nanowire base layer
机译:本发明涉及一种制造纳米线的方法。该方法包括以下步骤:在基板上形成多个栅格图案;在栅格图案上形成牺牲层;形成具有牺牲层的在栅格图案上具有至少一个黑化层的纳米线基础层;以及分离纳米线基础通过蚀刻牺牲层从网格图案中形成层。根据本发明,当所生产的纳米线被施加到透明电极上时,该方法可以低成本地大量生产纳米线,并且可以改善显示装置的可见性。COPYRIGHT KIPO 2014; [附图标记](AA)开始; (BB)结束; (S10)在基板上形成多个格子图案的工序; (S30)在网格图案上形成牺牲层的步骤; (S50)在具有牺牲层的栅格图案上形成具有至少一个黑化层的纳米线基础层的工序。 (S70)通过蚀刻牺牲层来分离纳米线基础层的步骤; (S90)从纳米线基础层分离纳米线的步骤

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